| PART |
Description |
Maker |
| R1RP0408DGE-2PI R1RP0408DI |
Memory>Fast SRAM>Asynchronous SRAM
Wide Temperature Range Version 4M High Speed SRAM (512-kword 】 8-bit)
Wide Temperature Range Version 4M High Speed SRAM (512-kword × 8-bit)
|
Renesas Electronics Corporation
|
| HM62W8511HCLJP-12 HM62W8511HC HM62W8511HCJP-10 HM6 |
Memory>Fast SRAM>Asynchronous SRAM
4M High Speed SRAM (512-kword x 8-bit)
BOX 5.0X1.85X1.0 W/CLP BLK
|
RENESAS[Renesas Electronics Corporation]
Renesas Electronics Corporation.
|
| HM62W8511HC HM62W8511HCJP-10 HM62W8511HCLJP-10 |
4M High Speed SRAM (512-kword x 8-bit)
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| R1LP0408CSP-7LC R1LP0408C-C R1LP0408CSB-5SC R1LP04 |
4M SRAM (512-kword ??8-bit)
4M SRAM (512-kword 8-bit)
4M SRAM (512-kword × 8-bit)
4M SRAM (512-kword 】 8-bit)
Memory>Low Power SRAM
|
Renesas Electronics Corporation.
RENESAS[Renesas Electronics Corporation]
|
| R1LV0408DSP-5SI R1LV0408DSA-5SR R1LV0408DSP-5SR |
4M SRAM (512-kword 8-bit) 4分的SRAM12 - KWord的位）
4M SRAM (512-kword ??8-bit)
|
Renesas Electronics, Corp.
Renesas Electronics Corporation.
|
| R1RW0416DSB-2PI R1RW0416DGE-2PI R1RW0416DI |
Memory>Fast SRAM>Asynchronous SRAM
Wide Temperature Range Version 4M High Speed SRAM (256-kword 】 16-bit)
Wide Temperature Range Version 4M High Speed SRAM (256-kword × 16-bit)
|
Renesas Electronics Corporation
|
| HM64YLB36514BP-6H HM64YLB36514 |
16M Synchronous Late Write Fast Static RAM (512-kword × 36-bit, Register-Latch Mode)
16M Synchronous Late Write Fast Static RAM (512-kword 】 36-bit, Register-Latch Mode)
Memory>Fast SRAM>Late Write / High Speed Interface Synchronous SRAM
|
Renesas Electronics Corporation
|
| IDT70T633S12BCI IDT70T633S15BF IDT70T633S15BFI IDT |
HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 256K X 18 DUAL-PORT SRAM, 12 ns, PBGA208
122 x 32 pixel format, Compact LCD size 256K X 18 DUAL-PORT SRAM, 10 ns, PBGA256
122 x 32 pixel format, Compact LCD size 256K X 18 DUAL-PORT SRAM, 12 ns, PBGA256
HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 高.5V12/256K.3V 5011 2.5V的接口18 ASYNCHRONO美国双端口静态RAM
JFET-Input Operational Amplifier 8-SOIC 0 to 70 256K X 18 DUAL-PORT SRAM, 12 ns, PQFP144
HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 256K X 18 DUAL-PORT SRAM, 8 ns, PBGA208
JFET-Input Operational Amplifier 14-SOIC 0 to 70
WRISTBAND, ELASTIC, ADJUSTABLE 4MM RoHS Compliant: NA
High-speed 2.5V 512 x 18 asynchronous dual-port static RAM, 15ns
|
Integrated Device Technology, Inc.
IDT
|
| R1RP0416DI-15 |
Wide Temperature Range Version 4M High Speed SRAM (256-kword × 16-bit)
|
Renesas Electronics Corporation
|
| HM62W16255H |
4M High Speed SRAM (256-kword ?16-bit)(4M楂?????RAM(256k瀛??16浣?)
|
Hitachi,Ltd.
|
| R1RW0416DGE-0PI R1RW0416DSB-0PI R1RW0416DI10 |
Wide Temperature Range Version 4M High Speed SRAM (256-kword × 16-bit)
|
Renesas Electronics Corporation
|
| HM62W16255CJPI12 |
Wide Temperature Range Version 4M High Speed SRAM (256-kword 16-bit) 宽温版本4分高速SRAM56 - KWord的?16位）
|
Hitachi,Ltd.
|
